MTB1K0P25J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C091J3
Issued Date : 2015.10.07
Revised Date : 2015.10.13
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB1K0P25J3
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-3A
RDS(ON)@VGS=-4.5V, ID=-3A
-250V
-3.2A
1.0Ω(typ)
1.1Ω(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB1K0P25J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
Package
MTB1K0P25J3-0-T3-G
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0P25J3
CYStek Product Specification