MTB1K0N20KL3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB1K0N20KL3
Spec. No. : C043L3
Issued Date : 2017.07.03
Revised Date : 2017.07.20
Page No. : 1/9
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate, HBM 6kV, typically
• Pb-free lead plating & Halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=2A
RDSON@VGS=4.5V, ID=1A
200V
1A
830mΩ (typ.)
777mΩ (typ.)
Equivalent Circuit
MTB1K0N20KL3
Outline
SOT-223
D
G：Gate D：Drain
S：Source
S
D
G
Ordering Information
Device
MTB1K0N20KL3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB1K0N20KL3
Preliminary
CYStek Product Specification