MTB1D8NR03E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB1D8NR03E3
Spec. No. : C948E3
Issued Date : 2015.05.08
Revised Date :
Page No. : 1/8
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID @VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=30A
RDSON(TYP) @ VGS=4.5V, ID=20A
30V
180A
2.7mΩ
3.3mΩ
Symbol
MTB1D8NR03E3
Outline
TO-220
G：Gate
D：Drain
S：Source
SDG
Ordering Information
Device
Package
Shipping
MTB1D8NR03E3-0-UB-S
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D8NR03E3
CYStek Product Specification