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MTB1D5N03H8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
Spec. No. : C984H8
Issued Date : 2017.01.06
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB1D5N03H8
Features
⢠Low On Resistance
⢠Simple Drive Requirement
⢠Low Gate Charge
⢠Fast Switching Characteristic
⢠Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V
156A(silicon limit)
84A(package limit)
23.5A
1.3mΩ(typ)
1.6mΩ(typ)
Symbol
MTB1D5N03H8
Gï¼Gate Dï¼Drain Sï¼Source
Outline
Pin 1
S
S
S
G
DFN5Ã6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB1D5N03H8-0-T6-G
Package
DFN 5 Ã6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13â reel
Product rank, zero for no rank products
Product name
MTB1D5N03H8
CYStek Product Specification
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