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MTB190P10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET
Spec. No. : C108J3
CYStech Electronics Corp.
Issued Date : 2015.09.07
Revised Date :
P-Channel Enhancement Mode Power MOSFET
MTB190P10J3
BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-8A
RDS(ON)@VGS=-4.5V, ID=-8A
-100V
-8.4A
180mΩ(typ)
210mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB190P10J3
Outline
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G DS
Ordering Information
Device
Package
MTB190P10J3-0-T3-G
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB190P10J3
CYStek Product Specification