MTB17A03V8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – Dual N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C396V8
Issued Date : 2013.08.09
Revised Date : 2013.08.14
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB17A03V8 BVDSS
ID
VGS=10V, ID=6A
RDSON(TYP)
VGS=4.5V, ID=4A
30V
7A
16mΩ
25mΩ
Description
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package,
providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost effectiveness.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB17A03V8
Outline
DFN3×3
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
MTB17A03V8-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB17A03V8
CYStek Product Specification