MTB110P10L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968L3
Issued Date : 2014.12.23
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P10L3
BVDSS
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TC=25°C
Features
• Simple Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
RDSON@VGS=-10V, ID=-4.5A
RDSON@VGS=-4.5V, ID=-4A
-100V
-3.8A
-10.8A
85mΩ (typ.)
96mΩ (typ.)
Symbol
MTB110P10L3
Outline
SOT-223
D
G：Gate
D：Drain
S：Source
S
D
G
Ordering Information
Device
MTB110P10L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P10L3
CYStek Product Specification