MTB110P10F3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968F3
Issued Date : 2014.08.05
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P10F3
BVDSS
ID @ VGS=-10V
RDSON(TYP) @ VGS=-10V, ID=-11A
RDSON(TYP) @ VGS=-4.5V, ID=-8A
Features
 Low Gate Charge
 Simple Drive Requirement
 Repetitive Avalanche Rated
 Fast Switching Characteristic
 RoHS compliant package
-100V
-23A
80mΩ
93mΩ
Symbol
MTB110P10F3
Outline
TO-263
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB110P10F3-0-T7-S
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P10F3
CYStek Product Specification