MTB110P08KN6 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – -80V P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C123N6
Issued Date : 2015.11.24
Revised Date :
Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6
BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
VGS=-10V, ID=-2A
RDSON(TYP)
VGS=-4.5V, ID=-1A
-80V
-3.7A
-2.9A
104mΩ
141mΩ
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
• ESD protected gate
Equivalent Circuit
MTB110P08KN6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-80
VGS
±20
V
TC=25 °C, VGS=-10V
-3.7
Continuous Drain Current
TC=70 °C, VGS=-10V
-3.0
ID
A
TA=25 °C, VGS=-10V (Note 1)
-2.9
TA=70 °C, VGS=-10V (Note 1)
-2.3
Pulsed Drain Current (Note 2, 3)
IDM
-20
TC=25 °C
3.2
Total Power Dissipation
TC=70 °C
TA=25 °C
2.1
PD
W
(Note 1)
2.0
TA=70 °C
(Note 1)
1.25
Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150 °C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
39
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
°C/W
MTB110P08KN6
CYStek Product Specification