MTB110P08KN3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – -80V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C123N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1A
-80V
-2.2A
104mΩ(typ)
141mΩ(typ)
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• ESD protected gate
• Pb-free lead plating package
Symbol
MTB110P08KN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTB110P08KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB110P08KN3
CYStek Product Specification