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MTB100N11RKJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET | |||
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CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB100N11RKJ3
Spec. No. : C059J3
Issued Date : 2017.07.04
Revised Date : 2017.07.05
Page No. : 1/9
Features
⢠Low Gate Charge
⢠Simple Drive Requirement
⢠ESD protected gate
⢠Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=8A
RDSON@VGS=4.5V, ID=6A
110V
10A
108mΩ(TYP)
123mΩ(TYP)
Equivalent Circuit
MTB100N11RKJ3
Outline
TO-252(DPAK)
Gï¼Gate Dï¼Drain Sï¼Source
G DS
Ordering Information
Device
MTB100N11RKJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13â reel
Product rank, zero for no rank products
Product name
MTB100N11RKJ3
CYStek Product Specification
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