MTB100N10RKN6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
MTB100N10RKN6
Spec. No. : C059N6
Issued Date : 2017.02.17
Revised Date :
Page No. : 1/9
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• ESD protected gate
• Pb-free lead plating package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=2A
RDSON(TYP)
VGS=4.5V, ID=2A
100V
3.2A
2.6A
105mΩ
123mΩ
Equivalent Circuit
MTB100N10RKN6
Outline
SOT-26
G：Gate S：Source D：Drain
Pin #1
Ordering Information
Device
Package
Shipping
MTB100N10RKN6-0-T1-G
SOT-26
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB100N10RKN6
Preliminary
CYStek Product Specification