MTB09P03E3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C808E3
Issued Date : 2014.12.22
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB09P03E3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-25A
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=-4.5V, ID=-10A
-30V
-75A
-11.6A
6.7mΩ
10.2mΩ
Symbol
MTB09P03E3
Outline
TO-220
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
Shipping
MTB09P03E3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09P03E3
CYStek Product Specification