MTB09N06J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912J3
Issued Date : 2013.07.24
Revised Date :
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB09N06J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
60V
50A
6.3 mΩ(typ)
9 mΩ(typ)
Description
The MTB09N06J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-252 package is universally preferred for all commercial-industrial applications.
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant and halogen-free package
Symbol
MTB09N06J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
MTB09N06J3
G DS
CYStek Product Specification