MTB09N06FP Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912FP
Issued Date : 2016.02.19
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB09N06FP
BVDSS
ID @ VGS=10V, TC=25°C
ID @ VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=30A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=4.5V, ID=20A
60V
60A
11A
6.4mΩ
7.8mΩ
Symbol
MTB09N06FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
GDS
Ordering Information
Device
Package
MTB09N06FP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09N06FP
CYStek Product Specification