MTB09N06F3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C912F3
Issued Date : 2017.03.30
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB09N06F3
BVDSS
ID @ VGS=10V, TC=25°C
ID @ VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=30A
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• RoHS compliant package
RDSON(TYP) @ VGS=4.5V, ID=20A
60V
87A
11A
6.4mΩ
7.8mΩ
Symbol
MTB09N06F3
Outline
TO-263
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB09N06F3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB09N06F3
CYStek Product Specification