MTB08N04J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C892J3
Issued Date : 2014.05.29
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB08N04J3
BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=5V, ID=10A
40V
60A
5.4mΩ(typ)
9.0mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB08N04J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTB08N04J3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB08N04J3
CYStek Product Specification