MTB080P06Q8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06Q8 BVDSS
ID@ VGS=-10V, TA=25°C
RDSON @VGS=-10V, ID=-4A
RDSON @VGS=-4.5V, ID=-3A
-60V
-4A
80.3mΩ(typ.)
108mΩ(typ.)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
MTB080P06Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
MTB080P06Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB080P06Q8
CYStek Product Specification