MTB080P06N6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069N6
Issued Date : 2016.03.24
Revised Date : 2016.04.15
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06N6
BVDSS
ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
VGS=-10V, ID=-3A
RDSON(TYP)
VGS=-4.5V, ID=-2.7A
-60V
-3.8A
-3.0A
79mΩ
107mΩ
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
-60
V
VGS
±20
TC=25 °C, VGS=-10V
-3.8
Continuous Drain Current
TC=70 °C, VGS=-10V
-3.0
ID
A
TA=25 °C, VGS=-10V (Note 1)
-3.0
TA=70 °C, VGS=-10V (Note 1)
-2.4
Pulsed Drain Current (Note 2, 3)
IDM
-40
TC=25 °C
3.1
Total Power Dissipation
TC=70 °C
TA=25 °C
2.0
PD
W
(Note 1)
2.0
TA=70 °C
(Note 1)
1.25
Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150 °C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-case, max
Rth,j-c
40
Thermal Resistance, Junction-to-ambient, max (Note 1)
RθJA
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
°C/W
MTB080P06N6
CYStek Product Specification