MTB080P06N3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C069N3
Issued Date : 2016.03.24
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
MTB080P06N3
BVDSS
ID@VGS=-10V, TA=25°C
VGS=-10V, ID=-2A
RDSON(TYP) _{VGS=-4.5V, ID=-1.7A}
-60V
-2.5A
80mΩ
109mΩ
Features
•Advanced trench process technology
•High density cell design for ultra low on resistance
•Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080P06N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTB080P06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB080P06N3
CYStek Product Specification