MTB080P06L3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C069L3
Issued Date : 2016.03.14
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06L3
BVDSS
ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-4.5V, ID=-2A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
-60V
-3.3A
90mΩ (typ)
117mΩ (typ)
Equivalent Circuit
MTB080P06L3
G：Gate D：Drain
S：Source
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB080P06L3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06L3
CYStek Product Specification