MTB06N03J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C441J3
Issued Date : 2009.03.02
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB06N03J3
BVDSS
ID
RDS(ON)
30V
80A
6mΩ
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTB06N03J3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation @ TC=25℃
(Note 2)
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTB06N03J3
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Limits
Unit
30
V
±20
80
50
A
170
53
140
mJ
40
83
W
45
-55~+175
°C
CYStek Product Specification