MTB06N03I3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C441I3
Issued Date : 2012.02.13
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB06N03I3
BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=5V, ID=24A
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
30V
75A
4.5mΩ(typ)
7.3mΩ(typ)
Symbol
MTB06N03I3
Outline
TO-251
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
±20
Continuous Drain Current @ TC=25°C
ID
75
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
ID
(Note 1)
IDM
47
A
200
Avalanche Current
IAS
53
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
EAS
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
EAR
140
mJ
40
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
50
Pd
W
20
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTB06N03I3
CYStek Product Specification