MTB060N06I3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date :
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTB060N06I3 BVDSS
ID
RDSON(MAX)@VGS=10V, ID=10A
RDSON(MAX)@VGS=5V, ID=8A
60V
16A
35mΩ(typ.)
40mΩ(typ.)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB060N06I3
Outline
TO-251
G：Gate D：Drain
S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB060N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB060N06I3
CYStek Product Specification