MTB050P10J3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C975J3
Issued Date : 2015.03.17
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB050P10J3
Features
BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TC=100°C
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDS(ON)@VGS=-10V, ID=-15A
RDS(ON)@VGS=-4.5V, ID=-12A
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
-100V
-24A
-17A
-4.1A
-3.3A
45 mΩ(typ)
51 mΩ(typ)
Symbol
MTB050P10J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB050P10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050P10J3
CYStek Product Specification