MTB032P06AV8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06AV8
Description
BVDSS
ID@VGS=-10V, TC=25°C
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
-60V
-25A
30mΩ(typ)
35mΩ(typ)
The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB032P06AV8
Outline
Pin 1
DFN3×3
G：Gate S：Source D：Drain
Ordering Information
Device
MTB032P06AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB032P06AV8
CYStek Product Specification