MTB030P06KH8 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
MTB030P06KH8
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-6A
RDS(ON)@VGS=-4.5V, ID=-4A
RDS(ON)@VGS=-4V, ID=-3A
-60V
-34A
-5.9A
21.4 mΩ(typ)
35.6 mΩ(typ)
42.6 mΩ(typ)
Symbol
MTB030P06KH8
Outline
Pin 1
DFN5×6
G：Gate D：Drain S：Source
Ordering Information
Device
MTB030P06KH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB030P06KH8
CYStek Product Specification