MTB020N03KN6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C143N6
Issued Date : 2016.01.06
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
MTB020N03KN6
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=7A
RDS(ON)@VGS=4.5V, ID=5A
30V
7A
8.8A
14.7 mΩ(typ)
18.9 mΩ(typ)
Description
The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
• ESD protected gate
Equivalent Circuit
MTB020N03KN6
G：Gate S：Source D：Drain
Ordering Information
Device
Package
Shipping
MTB020N03KN6-0-T1-G
SOT-26
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB020N03KN6
CYStek Product Specification