MTB020N03KJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB020N03KJ3
Features
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=20A
RDSON(TYP) VGS=4.5V, ID=10A
VGS=4V, ID=10A
 Low Gate Charge
 Simple Drive Requirement
 ESD Protected Gate
 Pb-free lead plating and halogen-free package
30V
30A
9A
13mΩ
18mΩ
21mΩ
Equivalent Circuit
MTB020N03KJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB020N03KJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KJ3
CYStek Product Specification