MTB010N02DFJ6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – 25V N-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C972DFJ6
Issued Date : 2015.04.01
Revised Date : 2015.09.03
Page No. : 1/9
25V N-CHANNEL Enhancement Mode MOSFET
MTB010N02DFJ6
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8.5A
Features
• Low on-resistance
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
RDSON@VGS=4.5V, ID=6.8A
25V
18.2A
8.8A
10.9mΩ(typ.)
15.3mΩ(typ.)
Equivalent Circuit
MTB010N02DFJ6
Outline
DFNWB2×2-6L-J
G：Gate S：Source D：Drain
Ordering Information
Device
MTB010N02DFJ6-0-T1-G
Package
DFNWB2×2-6L-J
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB010N02DFJ6
CYStek Product Specification