MTA340N02N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – 20V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTA340N02N3
BVDSS
ID
RDSON@VGS=4.5V, ID=650mA
RDSON@VGS=2.5V,ID=500mA
RDSON@VGS=1.8V,ID=200mA
20V
820mA
299mΩ(typ)
541mΩ(typ)
1.05Ω (typ)
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
MTA340N02N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
4. Surface mounted on FR-4 board of minimum pad size.
5. Human body model, 1.5kΩ in series with 100pF.
Symbol
VDS
VGS
ID
IDM
PD
VESD
Tj, Tstg
MTA340N02N3
Limits
20
±12
820 (Note 4)
656 (Note 4)
3.3
1.38 (Note 3)
0.35 (Note 4)
1400 (Note 5)
-55~+150
Unit
V
mA
A
W
V
°C
CYStek Product Specification