MTA100N10RKJ3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTA100N10RKJ3
Spec. No. : C059J3
Issued Date : 2017.04.12
Revised Date :
Page No. : 1/9
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate
• Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=8A
RDSON@VGS=4.5V, ID=6A
100V
10A
108mΩ(TYP)
123mΩ(TYP)
Equivalent Circuit
MTA100N10RKJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTA100N10RKJ3-0-T3-G
Package
Shipping
TO-252
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTA100N10RKJ3
Preliminary
CYStek Product Specification