MTA025P01SN3 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – -14V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C089N3
Issued Date : 2015.11.09
Revised Date :
Page No. : 1/9
-14V P-Channel Enhancement Mode MOSFET
MTA025P01SN3 BVDSS
ID @ VGS=-4.5V, TA=25°C
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-2.5V,ID=-4A
Features
RDSON@VGS=-1.8V,ID=-2A
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
-14V
-5.6A
25.5mΩ(typ)
35.5mΩ(typ)
52.0mΩ(typ)
Symbol
MTA025P01SN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTA025P01SN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA025P01SN3
CYStek Product Specification