MJE13003D3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
MJE13003D3
Spec. No. : C617D3
Issued Date : 2008.06.04
Revised Date :
Page No. : 1/5
Features
• High breakdown voltage, VCEO=400V (min.)
• High collector current, IC(max)=1.5A (DC)
• Pb-free package
Symbol
MJE13003D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
MJE13003D3
Limits
Unit
700
V
400
V
9
V
1.5
A
3 (Note )
A
0.2
A
1.5
W
20
W
150
°C
-55~+150
°C
CYStek Product Specification