MEP4435Q8_14 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date : 2014.03.05
Page No. : 1/9
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MEP4435Q8 BVDSS
ID
RDSON(MAX)@VGS=-10V, ID=-10A
RDSON(MAX)@VGS=-5V, ID=-7A
RDSON(MAX)@VGS=-4.5V, ID=-5A
-30V
-13A
9.3mΩ(typ.)
14mΩ(typ.)
15mΩ(typ.)
Description
The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
MEP4435Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MEP4435Q8
CYStek Product Specification