MEN09N03BJ3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 1/7
N-Channel Logic Level Enhancement Mode Power MOSFET
MEN09N03BJ3
Features
• VDS=30V, ID=50A, RDS(ON)=9mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
• Repetitive Avalanche Rated
• Fast Switching Characteristic
BVDSS 30V
ID
50A
RDSON 9mΩ
Symbol
MEN09N03BJ3
Outline
TO-252
G：Gate
D：Drain
S：Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Power Dissipation (TC=25℃)
Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
30
V
±20
V
50
A
35
A
140 *1
A
37.5
A
70
mJ
15 *2 mJ
60
W
32
W
-55~+175
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle≤1%
MEN09N03BJ3
CYStek Product Specification