MBNP2026G6 Datasheet, PDF (1/10 Pages) Cystech Electonics Corp. – N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device

CYStech Electronics Corp.
Spec. No. : C197G6
Issued Date : 2011.01.20
Revised Date :
Page No. : 1/10
N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device
MBNP2026G6
Description
The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single
TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MBNP2026G6
Outline
TSOP-6
C2
S1
D1
G：Gate B : Base
S：Source E : Emitter
D：Drain C : Collector
B2
E2
G1
MBNP2026G6
CYStek Product Specification