LB120A3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
LB120A3
Spec. No. : C618A3
Issued Date : 2009.07.07
Revised Date :
Page No. : 1/3
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=400V (min.)
• Pb-free package
Symbol
LB120A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
LB120A3
E CB
Limits
600
400
9
0.5
1
125
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C
°C
CYStek Product Specification