HQN2498QF Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Quadruple High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Quadruple High Voltage NPN Epitaxial Planar Transistor
Built-in Base Resistor
HQN2498QF
Spec. No. : C899QF
Issued Date : 2009.11.09
Revised Date : 2009.12.23
Page No. : 1/6
Description
• High breakdown voltage. (BVCEO=400V)
• Low saturation voltage, typical VCE(sat) =0.13V at Ic/IB =20mA/1mA.
• Complementary to HQP1498QF
• Pb-free package
Equivalent Circuit
HQN2498QF
Outline
SOP-10
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
300
mA
Total Power Dissipation
Pd
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
HQN2498QF
Preliminary
CYStek Product Specification