HBN2411S6R Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistors

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
(dual transistors)
HBN2411S6R
Spec. No. : C203S6R
Issued Date : 2003.09.12
Revised Date : 2005.03.30
Page No. : 1/ 5
Features
• Two BTC2411chips in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• High IC(Max) . IC (Max) = 0.6A
• Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA
Optimal for low Voltage operation
• Complementary to HBP1036S6R
Equivalent Circuit
Outline
HBN2411S6R
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Unit
60
V
40
V
6
V
0.6
A
200(total) (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
HBN2411S6R
CYStek Product Specification