EF10CXXE3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – 10Amp. Glass Passivated Efficient Fast Recovery Rectifiers

CYStech Electronics Corp.
Spec. No. : C749E3
Issued Date : 2006.07.26
Revised Date :
Page No. : 1/3
10Amp. Glass Passivated Efficient Fast Recovery Rectifiers
EF10CXXE3 Series
Features
• Fast switching for high efficiency
• Low forward voltage drop
• High current capability
• Low reverse leakage current
• High surge current capability
Mechanical Data
• Case: Molded plastic, TO-220AB
• Terminals: Solderrable per MIL-STD-202 method 208
• Epoxy: UL 94V-0 rate flame retardant
• Mounting Position: Any
• Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Maximum Recurrent peak reverse
voltage
Symbol
VRRM
EF
10C01
50
EF
10C02
100
Type
EF
10C03
200
EF
EF
10C05 10C06
400 600
Units
V
Maximum RMS voltage
VRMS
35
70
140 280 420
V
Maximum DC blocking voltage
VDC
50
100 200 400 600
V
Maximum instantaneous forward
voltage@ IF=5A
VF
Maximum Average forward rectified
current @ TL=100℃
I(AV)
Peak forward surge current @8.3ms
single half sine wave superimposed
IFSM
on rated load (JEDEC method)
Maximum DC reverse current
VR=VRRM,TJ=25℃
IR
VR=VRRM,TJ=125℃
Diode junction capacitance @ f=1MHz
and applied 4V reverse voltage
CJ
Maximum reverse recovery time@
IF=0.5A, IR=1A, Irr=0.25A
trr
Typical thermal resistance, junction to
lead
RθJC
Storage temperature
Tstg
Operating temperature
TJ
0.95
1.25 1.85
V
10
A
100
A
10
250
65
25
2.2
-55 ~ +150
-55 ~ +150
µA
pF
ns
℃/W
℃
℃
EF10CXXE3
CYStek Product Specification