BTPA94N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309N3-H
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTPA94N3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44N3.
Symbol
BTPA94N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
-400
-400
-6
-300
225
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTPA94N3
CYStek Product Specification