BTP955M3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.12.27
Revised Date :
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955M3
Features
• 3 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A
• Pb-free package
Symbol
BTP955M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B^B C ^CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Power Dissipation
Pd
ESD susceptibility
Operating and Storage Temperature Range
Tj ; Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 25×25×1.6 mm
2. When mounted on ceramic with area measuring 50×50×1.6 mm
3. Human body model, 1.5kΩ in series with 100pF
BTP955M3
Limits
Unit
-180
V
-140
V
-7
V
-3
A
-10
A
-1
A
0.6
1.5 (Note 1)
W
2.1 (Note 2)
4000 (Note 3)
V
-55 ~ +150
°C
CYStek Product Specification