BTP955J3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C607J3-A
Issued Date : 2006.06.07
Revised Date :
Page No. : 1/5
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955J3
Features
• 4 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Ptot=3Watts
• Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A
• Pb-free package
Symbol
BTP955J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
@TA=25°C
@TC=25°C
Operating and Storage Temperature Range
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
BTP955J3
preliminary
BCE
Limits
Unit
-120
V
-100
V
-6
V
-4
A
-10 (Note 1)
A
-1 (Note 2)
A
1.75
W
20
W
-55 ~ +150
°C
CYStek Product Specification