BTP949L3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
BTP949L3
Spec. No. : C657L3
Issued Date : 2005.10.14
Revised Date :
Page No. : 1/6
Features
• Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A
• 6A continuous current(up to 20A peak)
• Excellent current gain linearity
• Pb-free package
Symbol
BTP949L3
Outline
C
SOT-223
B：Base
C：Collector
E：Emitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current (DC)
Collector Current (Pulse)
IC
ICP
-5.5
-20 (Note 1)
A
Power Dissipation @ TA=25℃
Ptot
3 (Note 2)
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : 1. Single Pulse , Pw≦380µs, Duty≦2%.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper
equal to 4 square inch minimum.
BTP949L3
CYStek Product Specification