BTP5401N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307N3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTP5401N3
Description
• The BTP5401N3 is designed for general purpose amplification.
• Large IC , IC( Max) = -0.6A
• High BVCEO, BVCEO= -150V
• Complementary to BTN5551N3.
Symbol
BTP5401N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
-160
-150
-5
-0.6
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401N3
CYStek Product Specification