BTP5401A3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307A3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTP5401A3
Description
• The BTP5401A3 is designed for general purpose amplification.
• Large IC , IC( Max) = -0.6A
• High BVCEO, BVCEO= -150V
• Complementary to BTN5551A3.
Symbol
BTP5401A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
EBC
Limits
-160
-150
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP5401A3
CYStek Product Specification