BTP2907AL3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C317L3-H
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/3
BTP2907AL3
Description
• The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the
SOT-223 package which is designed for medium power surface mount applications.
• Low VCE(sat)
• High switching speed.
• Complementary to BTN2222AL3
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Power Dissipation @TC=25℃
Pd
5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
-60
-
-
*BVCEO
-60
-
-
BVEBO
-5
-
-
ICBO
-
-
-10
ICEX
-
-
-50
*VCE(sat)
-
-0.2
-0.4
*VCE(sat)
-
-0.5
-1.6
*VBE(sat)
-
-
-1.3
*VBE(sat)
-
-
-2.6
*hFE
75
-
-
*hFE
100
-
-
*hFE
100
-
-
*hFE
100
-
300
*hFE
50
-
-
fT
200
-
Cob
-
-
8
BTP2907AL3
Unit
Test Conditions
V
V
V
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
IC=-10uA
IC=-10mA
IE=-10uA
VCB=-50V
VCE=-30V, VBE(OFF)=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100uA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
CYStek Product Specification