BTP1955L3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C811L3
Issued Date : 2007.09.04
Revised Date : 2009.09.23
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP1955L3
Features
• 4 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Ptot=3Watts
• Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A
• Pb-free package
Symbol
BTP1955L3
Outline
SOT-223
C
B：Base
C：Collector
E：Emitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
ESD susceptibility
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
Limits
Unit
-180
V
-140
V
-6
V
-4
A
-10
A
-1
A
3 (Note 1)
W
4000 (Note 2)
V
-55 ~ +150
°C
Note: 1.The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
2.Human body model, 1.5kΩ in series with 100pF
BTP1955L3
CYStek Product Specification