BTNA44N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTNA44N3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.
• Complementary to BTPA94N3
Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
Symbol
BTNA44N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
Limit
400
400
6
300
225 (Note)
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTNA44N3
CYStek Product Specification